# doc-cache created by Octave 4.0.0
# name: cache
# type: cell
# rows: 3
# columns: 26
# name: <cell-element>
# type: sq_string
# elements: 1
# length: 21
coupled_circuit_coeff


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 442
 [ g, j, r ] = coupled_circuit_coeff (A, B, C, dt, x)
 
 Compute coefficients of circuit-device coupling of the form:

 g * F + j(x) + r * I = 0;
 
 
 INPUT
 A B C : descriptor system 
 dt : the time step in the backward Euler discretization;
 x : state variables.
 
 OUTPUT
 g : coefficient of the patch voltage
 j : constant bias term
 r : coefficient of the current in the node
 
 Author: davide <davide@davide-K53SV>
 Created: 2013-06-10



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 80
 [ g, j, r ] = coupled_circuit_coeff (A, B, C, dt, x)
 
 Compute coefficients of



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 34
secs1d_auger_recombination_noscale


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 108
 [Rn, Rp, G] = secs1d_auger_recombination_noscale ...
      (device, material, constants, algorithm, n, p);



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 53
 [Rn, Rp, G] = secs1d_auger_recombination_noscale ...



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 30
secs1d_bandgap_narrowing_model


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 13
 OldSlotboom



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 13
 OldSlotboom




# name: <cell-element>
# type: sq_string
# elements: 1
# length: 31
secs1d_carrier_lifetime_noscale


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 57
 tau = secs1d_carrier_lifetime_noscale (Na, Nd, carrier)



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 57
 tau = secs1d_carrier_lifetime_noscale (Na, Nd, carrier)




# name: <cell-element>
# type: sq_string
# elements: 1
# length: 29
secs1d_coupled_circuit_newton


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 105
F = V([1 end], 1) - constants.Vth * ...
                    log (n([1 end], 1) ./ device.ni([1 end], :))



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 39
F = V([1 end], 1) - constants.Vth * ...



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 39
secs1d_coupled_circuit_newton_reordered


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 15
 node ordering



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 15
 node ordering




# name: <cell-element>
# type: sq_string
# elements: 1
# length: 20
secs1d_dd_gummel_map


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 2496

 Solve the scaled stationary bipolar DD equation system using Gummel algorithm.

 [n, p, V, Fn, Fp, Jn, Jp, it, res] = secs1d_dd_gummel_map (x, D, Na, Nd, 
                                                       pin, nin, Vin, Fnin, 
                                                       Fpin, l2, er, u0n, 
                                                       uminn, vsatn, betan, 
                                                       Nrefn, u0p, uminp, vsatp, 
                                                       betap, Nrefp, theta, tn, tp, 
                                                       Cn, Cp, an, ap, Ecritnin, Ecritpin, 
                                                       toll, maxit, ptoll, pmaxit)         

     input: 
            x                        spatial grid
            D, Na, Nd                doping profile
            pin                      initial guess for hole concentration
            nin                      initial guess for electron concentration
            Vin                      initial guess for electrostatic potential
            Fnin                     initial guess for electron Fermi potential
            Fpin                     initial guess for hole Fermi potential
            l2                       scaled Debye length squared
            er                       relative electric permittivity
            u0n, uminn, vsatn, Nrefn electron mobility model coefficients
            u0p, uminp, vsatp, Nrefp hole mobility model coefficients
            theta                    intrinsic carrier density
            tn, tp, Cn, Cp, 
            an, ap, 
            Ecritnin, Ecritpin       generation recombination model parameters
            toll                     tolerance for Gummel iterarion convergence test
            maxit                    maximum number of Gummel iterarions
            ptoll                    convergence test tolerance for the non linear
                                     Poisson solver
            pmaxit                   maximum number of Newton iterarions

     output: 
             n     electron concentration
             p     hole concentration
             V     electrostatic potential
             Fn    electron Fermi potential
             Fp    hole Fermi potential
             Jn    electron current density
             Jp    hole current density
             it    number of Gummel iterations performed
             res   total potential increment at each step



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 80

 Solve the scaled stationary bipolar DD equation system using Gummel algorithm.



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 28
secs1d_dd_gummel_map_noscale


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 2030

 Solve the unscaled stationary bipolar DD equation system using Gummel algorithm.

 [n, p, V, Fn, Fp, Jn, Jp, it, res] = ...
    secs1d_dd_gummel_map_noscale (device, material,
                                  constants, algorithm,
                                  Vin, nin, pin, Fnin, Fpin)       

     input: 
            device.x                 spatial grid
            device.{D,Na,Nd}         doping profile
            pin                      initial guess for hole concentration
            nin                      initial guess for electron concentration
            Vin                      initial guess for electrostatic potential
            Fnin                     initial guess for electron Fermi potential
            Fpin                     initial guess for hole Fermi potential
            device.{u0n,uminn,vsatn,Nrefn}
                                     electron mobility model coefficients
            device.{u0p,uminp,vsatp,Nrefp}
                                     hole mobility model coefficients
            device.ni                intrinsic carrier density
            material.{tn,tp,Cn,Cp,an,ap,Ecritnin,Ecritpin}       
                                     generation recombination model parameters
            algorithm.toll           tolerance for Gummel iterarion convergence test
            algorithm.maxit          maximum number of Gummel iterarions
            algorithm.ptoll          convergence test tolerance for the non linear
                                     Poisson solver
            algorithm.pmaxit         maximum number of Newton iterarions

     output: 
             n     electron concentration
             p     hole concentration
             V     electrostatic potential
             Fn    electron Fermi potential
             Fp    hole Fermi potential
             Jn    electron current density
             Jp    hole current density
             it    number of Gummel iterations performed
             res   total potential increment at each step



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 80

 Solve the unscaled stationary bipolar DD equation system using Gummel algorith



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 16
secs1d_dd_newton


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 1506
 Solve the scaled stationary bipolar DD equation system using Newton's method.

 [n, p, V, Fn, Fp, Jn, Jp, it, res] = secs1d_dd_newton (x, D, Vin, nin, 
                                                        pin, l2, er, un, 
                                                        up, theta, tn, tp, 
                                                        Cn, Cp, toll, maxit)

     input: 
       x                spatial grid
       D                doping profile
       pin              initial guess for hole concentration
       nin              initial guess for electron concentration
       Vin              initial guess for electrostatic potential
       l2               scaled Debye length squared
       er               relative electric permittivity
       un               electron mobility model coefficients
       up               electron mobility model coefficients
       theta            intrinsic carrier density
       tn, tp, Cn, Cp   generation recombination model parameters
       toll             tolerance for Gummel iterarion convergence test
       maxit            maximum number of Gummel iterarions

     output: 
       n     electron concentration
       p     hole concentration
       V     electrostatic potential
       Fn    electron Fermi potential
       Fp    hole Fermi potential
       Jn    electron current density
       Jp    hole current density
       it    number of Gummel iterations performed
       res   total potential increment at each step



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 78
 Solve the scaled stationary bipolar DD equation system using Newton's method.



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 24
secs1d_dd_newton_noscale


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 1689
 Solve the scaled stationary bipolar DD equation system using Newton's method.

 [n, p, V, Fn, Fp, Jn, Jp, it, res] = secs1d_dd_newton_noscale ...
    (device, material, constants, algorithm, Vin, nin, pin, Fnin, Fpin) 

     input: 
            device.x                 spatial grid
            device.{D,Na,Nd}         doping profile
            Vin                      initial guess for electrostatic potential
            nin                      initial guess for electron concentration
            pin                      initial guess for hole concentration
            Fnin                     initial guess for electron Fermi potential
            Fpin                     initial guess for hole Fermi potential
            material.{u0n, uminn, vsatn, Nrefn}
                                     electron mobility model coefficients
            material.{u0p, uminp, vsatp, Nrefp}
                                     hole mobility model coefficients
            device.ni                intrinsic carrier density
            material.{tn,tp,Cn,Cp,an,ap,Ecritnin,Ecritpin}
                                     generation recombination model parameters
            algorithm.toll           tolerance for Gummel iterarion convergence test
            algorithm.maxit          maximum number of Gummel iterarions

     output: 
       n     electron concentration
       p     hole concentration
       V     electrostatic potential
       Fn    electron Fermi potential
       Fp    hole Fermi potential
       Jn    electron current density
       Jp    hole current density
       it    number of Gummel iterations performed
       res   total potential increment at each step



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 78
 Solve the scaled stationary bipolar DD equation system using Newton's method.



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 32
secs1d_impact_ionization_noscale


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 118
 II = secs1d_impact_ionization_noscale ...
      (device, material, constants, algorithm, E, Jn, Jp, V, n, p, Fn, Fp)



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 42
 II = secs1d_impact_ionization_noscale ...



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 29
secs1d_mobility_model_noscale


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 133
 u = secs1d_mobility_model_noscale (device, material, constants, algorithm, E, V, n, p, Fn, Fp, carrier)
 FIXME: add documentation!!



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 80
 u = secs1d_mobility_model_noscale (device, material, constants, algorithm, E, V



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 13
secs1d_newton


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 13
 newton step



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 13
 newton step




# name: <cell-element>
# type: sq_string
# elements: 1
# length: 17
secs1d_newton_res


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 15
 if (! direct)



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 15
 if (! direct)




# name: <cell-element>
# type: sq_string
# elements: 1
# length: 23
secs1d_nlpoisson_newton


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 1248
 Solve the non-linear Poisson problem using Newton's algorithm.

 [V, n, p, res, niter] = secs1d_nlpoisson_newton (x, sinodes, Vin, nin, pin,
                                                  Fnin, Fpin, D, l2, er, toll, maxit)

     input:  
             x       spatial grid
             sinodes index of the nodes of the grid which are in the semiconductor subdomain
                     (remaining nodes are assumed to be in the oxide subdomain)
             Vin     initial guess for the electrostatic potential
             nin     initial guess for electron concentration
             pin     initial guess for hole concentration
             Fnin    initial guess for electron Fermi potential
             Fpin    initial guess for hole Fermi potential
             D       doping profile
             l2      scaled Debye length squared
             er      relative electric permittivity
             toll    tolerance for convergence test
             maxit   maximum number of Newton iterations

     output: 
             V       electrostatic potential
             n       electron concentration
             p       hole concentration
             res     residual norm at each step
             niter   number of Newton iterations



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 63
 Solve the non-linear Poisson problem using Newton's algorithm.



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 31
secs1d_nlpoisson_newton_noscale


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 1569
 Solve the non-linear Poisson problem using Newton's algorithm.

 [V, n, p, res, niter] = secs1d_nlpoisson_newton_noscale ...
                           (device, material, constants, algorithm, ...
                            Vin, nin, pin, Fnin, Fpin)

     input:  
             device.x          spatial grid
             device.sinodes    index of the nodes of the grid which are in the semiconductor subdomain
                               (remaining nodes are assumed to be in the oxide subdomain)
             device.D          doping profile
             algorithm.ptoll   tolerance for convergence test
             algorithm.pmaxit  maximum number of Newton iterations
             device.ni         intrinsic carrier density
             material.esi      oxide relative electric permittivity
             material.esio2    oxide relative electric permittivity
             constants.q       electron charge
             constants.Vth     thermal voltage
             Vin               initial guess for the electrostatic potential
             nin               initial guess for electron concentration
             pin               initial guess for hole concentration
             Fnin              initial guess for electron Fermi potential
             Fpin              initial guess for hole Fermi potential

     output: 
             V       electrostatic potential
             n       electron concentration
             p       hole concentration
             res     residual norm at each step
             niter   number of Newton iterations



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 63
 Solve the non-linear Poisson problem using Newton's algorithm.



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 25
secs1d_physical_constants


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 277
 some useful physical constants 

 Kb       = Boltzman constant
 q        = quantum of charge
 e0       = permittivity of free space
 hplanck  = Plank constant
 hbar     = Plank constant by 2 pi
 mn0      = free electron mass
 T0       = temperature
 Vth 	   = thermal voltage



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 32
 some useful physical constants 



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 29
secs1d_physical_constants_fun


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 326
 constants = secs1d_physical_constants_fun ();

 some useful physical constants 

 Kb       = Boltzman constant
 q        = quantum of charge
 e0       = permittivity of free space
 hplanck  = Plank constant
 hbar     = Plank constant by 2 pi
 mn0      = free electron mass
 T0       = temperature
 Vth 	    = thermal voltage



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 46
 constants = secs1d_physical_constants_fun ();



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 34
secs1d_silicon_material_properties


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 1396
 material properties for silicon and silicon dioxide

 esir       = relative electric permittivity of silicon
 esio2r     = relative electric permittivity of silicon dioxide
 esi        = electric permittivity of silicon
 esio2      = electric permittivity of silicon dioxide
 mn         = effective mass of electrons in silicon
 mh         = effective mass of holes in silicon

 u0n        = low field electron mobility
 u0p        = low field hole mobility
 uminn      = parameter for doping-dependent electron mobility
 betan      = idem
 Nrefn      = idem
 uminp      = parameter for doping-dependent hole mobility
 betap      = idem
 Nrefp      = idem
 vsatn      = electron saturation velocity
 vsatp      = hole saturation velocity
 tp         = electron lifetime
 tn         = hole lifetime
 Cn         = electron Auger coefficient
 Cp         = hole Auger coefficient
 an         = impact ionization rate for electrons
 ap         = impact ionization rate for holes
 Ecritn     = critical field for impact ionization of electrons
 Ecritp     = critical field for impact ionization of holes
 Nc         = effective density of states in the conduction band
 Nv         = effective density of states in the valence band
 Egap       = bandgap in silicon
 EgapSio2   = bandgap in silicon dioxide

 ni         = intrinsic carrier density
 Phims      = metal to semiconductor potential barrier



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 52
 material properties for silicon and silicon dioxide



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 38
secs1d_silicon_material_properties_fun


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 1729
 material = secs1d_silicon_material_properties_fun ();
 material = secs1d_silicon_material_properties_fun (constants);

 material properties for silicon and silicon dioxide

 material.esir     = relative electric permittivity of silicon
 material.esio2r   = relative electric permittivity of silicon dioxide
 material.esi      = electric permittivity of silicon
 material.esio2    = electric permittivity of silicon dioxide
 material.mn       = effective mass of electrons in silicon
 material.mh       = effective mass of holes in silicon
 
 material.u0n      = low field electron mobility
 material.u0p      = low field hole mobility
 material.uminn    = parameter for doping-dependent electron mobility
 material.betan    = idem
 material.Nrefn    = idem
 material.uminp    = parameter for doping-dependent hole mobility
 material.betap    = idem
 material.Nrefp    = idem
 material.vsatn    = electron saturation velocity
 material.vsatp    = hole saturation velocity
 material.tp       = electron lifetime
 material.tn       = hole lifetime
 material.Cn       = electron Auger coefficient
 material.Cp       = hole Auger coefficient
 material.an       = impact ionization rate for electrons
 material.ap       = impact ionization rate for holes
 material.Ecritn   = critical field for impact ionization of electrons
 material.Ecritp   = critical field for impact ionization of holes 
 material.Nc       = effective density of states in the conduction band
 material.Nv       = effective density of states in the valence band
 material.Egap     = bandgap in silicon
 material.EgapSio2 = bandgap in silicon dioxide
 
 material.ni       = intrinsic carrier density
 material.Phims    = metal to semiconductor potential barrier



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 80
 material = secs1d_silicon_material_properties_fun ();
 material = secs1d_silico



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 32
secs1d_srh_recombination_noscale


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 152
 FIXME: add more descriptive docstring.
  [Rn, Rp, Gn, Gp] = secs1d_srh_recombination_noscale ...
      (device, material, constants, algorithm, n, p);



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 39
 FIXME: add more descriptive docstring.



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 25
secs1d_tran_dd_gummel_map


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 2765

 Solve the scaled transient bipolar DD equation system using Gummel algorithm.

 [n, p, V, Fn, Fp, Jn, Jp, it, res] = secs1d_tran_dd_gummel_map (x, tspan, vbcs, D, Na, Nd, 
                                                                 pin, nin, Vin, Fnin, 
                                                                 Fpin, l2, er, u0n, 
                                                                 uminn, vsatn, betan, 
                                                                 Nrefn, u0p, uminp, vsatp, 
                                                                 betap, Nrefp, theta, tn, tp, 
                                                                 Cn, Cp, an, ap, Ecritnin, Ecritpin, 
                                                                 toll, maxit, ptoll, pmaxit)         

     input: 
            x                        spatial grid
            tspan = [tmin, tmax]     time integration interval
            vbcs = {fhnbc, fpbc}     cell aray of function handles to compute applied potentials as a function of time
            D, Na, Nd                doping profile
            pin                      initial guess for hole concentration
            nin                      initial guess for electron concentration
            Vin                      initial guess for electrostatic potential
            Fnin                     initial guess for electron Fermi potential
            Fpin                     initial guess for hole Fermi potential
            l2                       scaled Debye length squared
            er                       relative electric permittivity
            u0n, uminn, vsatn, Nrefn electron mobility model coefficients
            u0p, uminp, vsatp, Nrefp hole mobility model coefficients
            theta                    intrinsic carrier density
            tn, tp, Cn, Cp, 
            an, ap, 
            Ecritnin, Ecritpin       generation recombination model parameters
            toll                     tolerance for Gummel iterarion convergence test
            maxit                    maximum number of Gummel iterarions
            ptoll                    convergence test tolerance for the non linear
                                     Poisson solver
            pmaxit                   maximum number of Newton iterarions

     output: 
             n     electron concentration
             p     hole concentration
             V     electrostatic potential
             Fn    electron Fermi potential
             Fp    hole Fermi potential
             Jn    electron current density
             Jp    hole current density
             it    number of Gummel iterations performed
             res   total potential increment at each step



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 79

 Solve the scaled transient bipolar DD equation system using Gummel algorithm.



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 33
secs1d_tran_dd_gummel_map_noscale


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 2217

 Solve the unscaled transient bipolar DD equation system using Gummel algorithm.

 [n, p, V, Fn, Fp, Jn, Jp, it, res] = ...
           secs1d_tran_dd_gummel_map_noscale (device, material, constants, algorithm,
                                              Vin, nin, pin, Fnin, Fpin, tspan, vbcs)         

     input: 
            device.x                 spatial grid
            tspan = [tmin, tmax]     time integration interval
            vbcs = {fhnbc, fpbc}     cell aray of function handles to compute applied potentials as a function of time
            device.{D,Na,Nd}         doping profile
            Vin                      initial guess for electrostatic potential
            nin                      initial guess for electron concentration
            pin                      initial guess for hole concentration
            Fnin                     initial guess for electron Fermi potential
            Fpin                     initial guess for hole Fermi potential
            material.{u0n, uminn, vsatn, Nrefn}
                                     electron mobility model coefficients
            material.{u0p, uminp, vsatp, Nrefp}
                                     hole mobility model coefficients
            device.ni              intrinsic carrier density
            material.{tn,tp,Cn,Cp,an,ap,Ecritnin,Ecritpin}
                                     generation recombination model parameters
            algorithm.toll           tolerance for Gummel iterarion convergence test
            algorithm.maxit          maximum number of Gummel iterarions
            algorithm.ptoll          convergence test tolerance for the non linear
                                     Poisson solver
            algorithm.pmaxit         maximum number of Newton iterarions

     output: 
             n     electron concentration
             p     hole concentration
             V     electrostatic potential
             Fn    electron Fermi potential
             Fp    hole Fermi potential
             Jn    electron current density
             Jp    hole current density
             it    number of Gummel iterations performed
             res   total potential increment at each step



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 80

 Solve the unscaled transient bipolar DD equation system using Gummel algorithm



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 29
secs1d_tran_dd_newton_noscale


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 1888
 Solve the scaled stationary bipolar DD equation system using Newton's method.

 [n, p, V, Fn, Fp, Jn, Jp, it, res] = secs1d_tran_dd_newton_noscale ...
    (device, material, constants, algorithm, Vin, nin, pin, Fnin, Fpin, tspan, vbcs)

     input: 
            device.x                 spatial grid
            tspan = [tmin, tmax]     time integration interval
            vbcs = {fhnbc, fpbc}     cell aray of function handles to compute applied potentials as a function of time
            device.{D,Na,Nd}         doping profile
            Vin                      initial guess for electrostatic potential
            nin                      initial guess for electron concentration
            pin                      initial guess for hole concentration
            Fnin                     initial guess for electron Fermi potential
            Fpin                     initial guess for hole Fermi potential
            material.{u0n, uminn, vsatn, Nrefn}
                                     electron mobility model coefficients
            material.{u0p, uminp, vsatp, Nrefp}
                                     hole mobility model coefficients
            device.ni                intrinsic carrier density
            material.{tn,tp,Cn,Cp,an,ap,Ecritnin,Ecritpin}
                                     generation recombination model parameters
            algorithm.toll           tolerance for Newton iterarion convergence test
            algorithm.maxit          maximum number of Newton iterarions

     output: 
       n     electron concentration
       p     hole concentration
       V     electrostatic potential
       Fn    electron Fermi potential
       Fp    hole Fermi potential
       Jn    electron current density
       Jp    hole current density
       it    number of Newton iterations performed
       res   total potential increment at each step



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 78
 Solve the scaled stationary bipolar DD equation system using Newton's method.



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 29
secs2d_coupled_circuit_newton


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 15
 node ordering



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 15
 node ordering




# name: <cell-element>
# type: sq_string
# elements: 1
# length: 29
secs3d_coupled_circuit_newton


# name: <cell-element>
# type: sq_string
# elements: 1
# length: 15
 node ordering



# name: <cell-element>
# type: sq_string
# elements: 1
# length: 15
 node ordering






